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Diskresyon semiconductor pwodwi
Transistors - FETs, MOSFETs - RF
NE3516S02-T1C-A

NE3516S02-T1C-A

NE3516S02-T1C-A Image
Imaj ka reprezantasyon.
Gade espesifikasyon pou detay pwodwi.
CEL (California Eastern Laboratories)CEL (California Eastern Laboratories)
Nimewo Pati:
NE3516S02-T1C-A
Manifakti / Brand:
CEL (California Eastern Laboratories)
Deskripsyon pwodwi:
IC HJ-FET RF N-CH S02 4-MICROX
Datasheets:
NE3516S02-T1C-A.pdf
RoHs Status:
Plon gratis / RoHS konfòme
Stock kondisyon:
5121 pcs stock
Bato de:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

MANDE QUOTE

Tanpri ranpli tout jaden obligatwa yo avèk enfòmasyon kontak ou yo. Klike sou "SUBMIT RFQ"
nou pral kontakte ou yon ti tan pa imèl. Oswa Imèl nou: info@Micro-Semiconductors.com
Pri Sib(USD):
Kantite:
Tanpri ban nou pri sib ou si kantite ki pi gran pase sa yo parèt.
Total: $0.00
NE3516S02-T1C-A
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Kontakte Non
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NE3516S02-T1C-A Image

Espesifikasyon nan NE3516S02-T1C-A

CEL (California Eastern Laboratories)CEL (California Eastern Laboratories)
(Klike sou vid la pou fèmen otomatikman)
Nimewo Pati NE3516S02-T1C-A Manifakti CEL (California Eastern Laboratories)
Deskripsyon IC HJ-FET RF N-CH S02 4-MICROX Plon gratis Status / RoHS Status Plon gratis / RoHS konfòme
Kantite ki disponib 5121 pcs stock Done fèy NE3516S02-T1C-A.pdf
Voltage - Tès 2V Voltage - Rated 4V
Transistor Tip N-Channel GaAs HJ-FET Founisè Aparèy pake S02
Seri - Pouvwa - Sòti 165mW
Anbalaj Tape & Reel (TR) Pake / Ka 4-SMD, Flat Leads
Bri figi 0.35dB Imidite sansiblite Nivo (MSL) 1 (Unlimited)
Plon gratis Status / RoHS Status Lead free / RoHS Compliant Akeri 14dB
Frekans 12GHz Detaye Deskripsyon RF Mosfet N-Channel GaAs HJ-FET 2V 10mA 12GHz 14dB 165mW S02
Kouran Rating 60mA Kouran - Tès 10mA
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